preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM800DZ-34H high power switching use insulated type i c ................................................................... 800a v ces ....................................................... 1700v insulated type 2-elements in a pack application inverters, converters, dc choppers, induction heating, dc to dc converters. CM800DZ-34H hvigbt modules (high voltage insulated gate bipolar transistor modules) outline drawing & circuit diagram dimensions in mm 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules cm g1 g2 e1 e1 e2 e2 c1 4 - m8 nuts 6 - m4 nuts c2 c2 c1 c1 e1 e1 g1 c1 c2 e2 e2 g2 c2 114 31.5 57 53 44 40 28 14 20 30 140 130 16 18 5 38 11.85 55.2 11.5 35 5 57 0.25 57 0.25 124 0.25 6 - 7 mounting holes circuit diagram label
preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM800DZ-34H high power switching use insulated type hvigbt modules (high voltage insulated gate bipolar transistor modules) maximum ratings (tj = 25 c) v ge = 0v v ce = 0v t c = 25 c pulse (note 1) t c = 25 c pulse (note 1) t c = 25 c, igbt part charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 auxiliary terminals screw m4 typical value 1700 20 800 1600 800 1600 5000 ?0 ~ +150 ?0 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.0 v v a a a a w c c v n? n? n? kg collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage mounting torque mass collector current emitter current symbol item conditions unit ratings v v v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 850v, i c = 800a, v ge = 15v v cc = 850v, i c = 800a v ge1 = v ge2 = 15v r g = 3.3 ? resistive load switching operation i e = 800a, v ge = 0v i e = 800a die / dt = ?600a / s junction to case, igbt part (per 1/2 module) junction to case, fwdi part (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) i c = 80ma, v ce = 10v i c = 800a, v ge = 15v (note 4) v ce = 10v v ge = 0v 12 0.5 3.64 1.60 2.00 2.70 0.80 3.38 2.70 0.025 0.043 ma a nf nf nf c s s s s v s c k/w k/w k/w 2.80 3.20 72 9.0 3.6 6.6 2.60 150 0.020 5.5 4.5 6.5 collector cutoff current gate-emitter threshold voltage gate-leakage current collector-emitter saturation voltage input capacitance output capacitance reverse transfer capacitance total gate charge turn-on delay time turn-on rise time turn-off delay time turn-off fall time emitter-collector voltage reverse recovery time reverse recovery charge contact thermal resistance min typ max i ces i ges c ies c oes c res q g t d (on) t r t d (off) t f v ec (note 2) t rr (note 2) q rr (note 2) r th(j-c)q r th(j-c)r r th(c-f) electrical characteristics (tj = 25 c) symbol item conditions v ge(th) v ce(sat) limits unit note 1. pulse width and repetition rate should be such that the device junction temp. (t j ) does not exceed t jmax rating. 2. i e , v ec , t rr , q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. thermal resistance 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules v ces v ges i c i cm i e (note 2) i em (note 2) p c (note 3) t j t stg v iso
preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 performance curves mitsubishi hvigbt modules CM800DZ-34H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules output characteristics ( typical ) collector current i c ( a ) transfer characteristics ( typical ) collector current i c ( a ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) free-wheel diode forward characteristics ( typical ) emitter current i e ( a ) emitter-collector voltage v ec ( v ) collector-emitter saturation voltage characteristics ( typical ) 800 400 0 10 0 246 1200 8 1600 0 5 4 3 2 1 0 400 800 1200 1600 v ge =15v t j = 25 c t j = 125 c 1600 800 400 0 1200 05 4 3 2 1 10 2 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 t j =25 c 20 0481216 v ce =10v t j = 25 c t j = 125 c collector-emitter saturation voltage v ce(sat) ( v ) 020 16 12 8 4 10 8 6 4 2 0 collector-emitter saturation voltage v ce(sat) ( v ) gate-emitter voltage v ge ( v ) collector-emitter saturation voltage characteristics ( typical ) t j = 25 c t j =25 c 10 1 23 10 1 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 capacitance vs. v ce ( typical ) capacitance c ies , c oes , c res ( nf ) collector-emitter voltage v ce ( v ) v ge = 0v, t j = 25 c c ies, c oes : f = 100khz c res : f = 1mhz
preliminary n otice : this is no t a final spe cifica tion . s om e param etric lim its are su bject to cha nge. mar. 2001 mitsubishi hvigbt modules CM800DZ-34H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules 7 5 3 2 710 2 10 0 7 23 5710 3 23 5 5 5 3 2 10 1 5 7 5 3 2 710 2 10 1 7 23 5710 3 23 5 5 5 3 2 10 0 5 v cc = 850v, v ge = 15v r g = 3.3 ? , t j = 125 c inductive load half-bridge switching characteristics ( typical ) switching times ( s ) collector current i c ( a ) v cc = 850v, t j = 125 c inductive load v ge = 15v, r g = 3.3 ? reverse recovery characteristics of free-wheel diode ( typical ) reverse recovery time t rr ( s ) emitter current i e ( a ) reverse recovery current i rr ( a ) 7 5 3 2 10 2 7 5 5 3 2 10 3 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 transient thermal impedance characteristics ( igbt part ) normalized transient thermal impedance z th(j c) time ( s ) 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 normalized transient thermal impedance z th(j c) time ( s ) transient thermal impedance characteristics ( fwdi part ) single pulse t c = 25 c r th(j c) = 0.025k/ w (per 1/2 module) single pulse t c = 25 c r th(j c) = 0.043k/ w (per 1/2 module) 20 16 12 8 4 0 4000 5000 3000 0 1000 2000 v ge ?gate charge ( typical ) gate-emitter voltage v ge ( v ) gate charge q g ( nc ) v cc = 850v i c = 800a
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